, o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon pnp power transistor 2SA1093 description ? collector-emitter breakdown voltage- :v(br)ceo=-120v(min.) ? good linearity of hf ? complement to type 2sc2563 applications ? audio frequency power amplifier applications ? recommend for sow audio amplifier output stage absolute maximum ratings(ta=25-q pin 1.base 2.collector 3. emitter to-3pi package symbol vcbo vceo vebo ic ib pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous base current-continuous collector power dissipation @ tc=25'c ? junction temperature storage temperature range value -120 -120 -5 -8 -0.8 80 150 -55-150 unit v v v a a w ?c "c -. b - * v a * 1 .._ _ *h ; 4 k ? *?-n -* c * s-? ? ? ' \ !; , "' ".i" \;j __j,' , .. '- .... \ -fc.-^j -?- -*r-^- dim a b c d f h j k l n q k s t u z mm men 19.60 15.30 4.00 0.90 3.20 2.90 0.50 19,90 1.20 10.80 4.40 3.30 1.40 1.00 2.10 7.90 max 20.10 15.70 4.60 1.10 3.40 3.10 0.70 21,30 2.20 11.00 4.60 3,35 1.60 1.20 2.30 9,10 r > j -"- -?-l *-*^d nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. " nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon pnp power transistor 2SA1093 electrical characteristics tc=25'c unless otherwise specified symbol v(br)ceo vce(sat) vee(on) icbo iebo hpe-1 hpe-2 cob fr parameter collector-emitter breakdown voltage collector-emitter saturation voltage base-emitter on voltage collector cutoff current emitter cutoff current dc current gain dc current gain output capacitance current-gain?bandwidth product conditions lc= -50ma ; ib= 0 lc= -4a; ib= -0.4a lc= -4a ; vce- -5v vcb=-120v; ie=0 veb= -5v; lc= 0 ic=-1a;vce=-5v lc= -4a; vce= -5v le=0;vcb=-10v;f= 1.0mhz lc=-1a;vce=-10v min -120 55 30 typ. 150 90 max -2.0 -2.5 -50 -50 240 unit v v v u a ma pf mhz ? h.fe-1 classifications r 55-110 o 80-160 y 120-240
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